| PART |
Description |
Maker |
| BLM7G22S-60PB BLM7G22S-60PBG |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-80AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-80PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| Q68000-A8787 CGY62 |
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 input / output) 200 MHz - 1800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 input / output)
From old datasheet system
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 ヘ input / output)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| PTGA090304MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W, 48 V, 575 ?960 MHz
|
Cree, Inc
|
| PTMC210124MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 12 W, 28 V, 1805 ?2200 MHz
|
Cree, Inc
|
| PTMC210204MD |
Wideband LDMOS Two-stage Integrated Power Amplifi er 20 W, 28 V, 1805 ?2200 MHz
|
Infineon Technologies A...
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLS7G2325L-105 BLS7G2325L-105-15 |
Power LDMOS transistor BLS7G2325L-105<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
